Hamamatsu InGaAs Line Array Scanning Camera C15333-10E04 Solar Cell Defect Inspection Short Wave Infrared

NegotiableUpdate on 03/05

Model

Nature of the Manufacturer: Producers

Product Category

Place of Origin

Online Consult

Overview

SWIR (short wavelength infrared) imaging is an ideal solution for non-destructive testing. It can see things beneath the surface, distinguish materials based on their SWIR spectral characteristics, and provide a safe and convenient way to ensure product quality. Integrating SWIR imaging into the production line requires cameras such as C15333-10E04 InGaAs line array scanning cameras, which have high SWIR sensitivity and fast line speed, making them ideal for real-time, inline non-destructive inspections.

Product Details

SWIR (short wavelength infrared) imaging is an ideal solution for non-destructive testing. It can see things beneath the surface, distinguish materials based on their SWIR spectral characteristics, and provide a safe and convenient way to ensure product quality. Integrating SWIR imaging into the production line requires cameras such as C15333-10E InGaAs line array scanning cameras, which have high SWIR sensitivity and fast line speed, making them ideal for real-time, inline non-destructive inspections.

　　characteristic

SWIR sensitivity from 950 nm to 1700 nm

1024 pixel linear array

Maximum line speed: 40 kHz

● Interface: Adopting Gigabit Ethernet

Equipped with high-quality images (background subtraction, real-time shadow correction)

　　purpose

Food and agricultural products (damage inspection, quality screening, material identification, etc.)

Semiconductor (silicon wafer pattern inspection, EL/PL solar cell inspection, etc.)

Industrial (moisture content, leak detection, container inspection, etc.)

　　detailed parameters

PRODUCT MODEL	C15333-10E04
Imaging device	InGaAs linear array sensor
Effective Pixels	1024 (H) × 1 (V)
cell size	12.5 μm (H) × 12.5 μm (V)
Effective area	12.8 mm (H) × 0.0125 mm (V)
Full trap capacity	Obtained 0:4.0 electrons, 1:0.76 electrons, 2:0.16 electrons, 3:0.16 electrons
Reading speed	Internal mode: 40 kHz (21 μ s exposure time) Edge trigger: 20 kHz (21 μ s exposure time) Synchronous readout: 40 kHz
time of exposure	21 μ s to 1 s (1 μ s step size)
External trigger input	Edge trigger, synchronous readout
External trigger signal routing	SMA or 12 pin HIROSE connector
Image processing function	Background subtraction, real-time shadow correction
interface	Gigabit Ethernet
A/D converter	14 positions
Lens interface	C-type interface
power supply	DC 12V
Power consumption	Maximum 6 W
operating ambient temperature	0 ℃ to+40 ℃
Storage environment temperature	-10 ℃ to+50 ℃
Operating environment humidity	30% to 80%(No fog phenomenon)
Storage environment humidity	Up to 90%（No fog phenomenon）

　　Spectral sensitivity characteristics

　　size